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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32472


    Title: Diffusion mechanism and photoluminescence of erbium in GaN
    Authors: Ting,YS;Chen,CC;Lee,CC;Chi,GC;Chini,TK;Chakraborty,P;Chuang,HW;Tsang,JS;Kuo,CT;Tsai,WC;Chen,SH;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: MOLECULAR-BEAM EPITAXY;DOPED GAN;IMPLANTED GAN;ER;EMISSION;ELECTROLUMINESCENCE;SI;EU
    Date: 2003
    Issue Date: 2010-07-06 18:28:59 (UTC+8)
    Publisher: 中央大學
    Abstract: Erbium has been diffused into GaN for the first time. A weak spontaneous emission is observed in the photoluminescence spectra after the diffusion process during 168 h at 800 degreesC, under N-2 atmosphere. The diffusion coefficient of erbium in GaN is ob
    Relation: OPTICAL MATERIALS
    Appears in Collections:[電機工程研究所] 期刊論文

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