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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32474


    Title: Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors
    Authors: Kang,BS;Kim,S;Kim,J;Ren,F;Baik,K;Pearton,SJ;Gila,BP;Abernathy,CR;Pan,CC;Chen,GT;Chyi,JI;Chandrasekaran,V;Sheplak,M;Nishida,T;Chu,SNG
    Contributors: 電機工程研究所
    Keywords: PIEZOELECTRIC POLARIZATION;HETEROSTRUCTURES;PERFORMANCE;DEFECTS;DEVICES;HEMTS;GAN
    Date: 2003
    Issue Date: 2010-07-06 18:29:03 (UTC+8)
    Publisher: 中央大學
    Abstract: The changes in the conductance of the channel of Al0.3Ga0.7N/GaN high-electron-mobility transistor structures during the application of both tensile and compressive strain were measured. For a fixed Al mole fraction, the changes in the conductance were ro
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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