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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32475


    Title: Effect of substrate biasing on Si/SiGe heterostructure MOSFETs for low-power circuit applications
    Authors: Li,PW;Liao,WM;Shih,CC;Kuo,TS;Lai,LS;Tseng,YT;Tsai,MJ
    Contributors: 電機工程研究所
    Keywords: LOW-FREQUENCY NOISE;PMOSFETS
    Date: 2003
    Issue Date: 2010-07-06 18:29:05 (UTC+8)
    Publisher: 中央大學
    Abstract: We have investigated the effect of substrate biasing on the subthreshold characteristics and noise levels of Si/Si1-xGex (x = 0, 0.15, 0.3) heterostructure MOSFETs. A detailed, analysis of the dependence of threshold voltage, off-state current, and low-fr
    Relation: IEEE ELECTRON DEVICE LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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