Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn

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Title:	Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn
Authors:	Polyakov,AY;Smirnov,NB;Govorkov,AV;Kim,J;Ren,F;Overberg,ME;Thaler,GT;Abernathy,CR;Pearton,SJ;Lee,CM;Chyi,JI;Wilson,RG;Zavada,JM
Contributors:	電機工程研究所
Keywords:	MOLECULAR-BEAM EPITAXY;ROOM-TEMPERATURE;SPIN INJECTION;SEMICONDUCTOR HETEROSTRUCTURE;PERSISTENT PHOTOCONDUCTIVITY;ION-IMPLANTATION;N-GAN;FILMS;FERROMAGNETISM;RECOMBINATION
Date:	2003
Issue Date:	2010-07-06 18:29:08 (UTC+8)
Publisher:	中央大學
Abstract:	Electrical and luminescent properties of GaN/InGaN multiquantum well light emitting diodes (MQW LEDs) with the top p-GaN layer implanted with 3 x 10(16) cm(-2) Mn ions for potential spin-polarized emission are reported. The forward current in the Mn-impla
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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