Electrical characteristics of a-SiGe : H thin-film transistors with Sb/Al binary alloy Schottky source/drain contact

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Title:	Electrical characteristics of a-SiGe : H thin-film transistors with Sb/Al binary alloy Schottky source/drain contact
Authors:	Lin,CS;Yeh,RH;Li,IX;Hong,JW
Contributors:	電機工程研究所
Keywords:	FIELD-EFFECT-MOBILITY;MOSFETS
Date:	2003
Issue Date:	2010-07-06 18:29:11 (UTC+8)
Publisher:	中央大學
Abstract:	The effects of composition of a-SiGe channel layer and annealing temperature oil the electrical performances of the inverted-staggered thin-film transistors with Sb/Al binary alloy Schottky source/drain contact had been Studied. The experimental results i
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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