High performance BCB-bridged AlGaAs/InGaAs power HFETs

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32484

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32484

Title:	High performance BCB-bridged AlGaAs/InGaAs power HFETs
Authors:	Chiu,HC;Yeh,TJ;Yang,SC;Hwu,MJ;Chan,YJ
Contributors:	電機工程研究所
Keywords:	GATE LEAKAGE CURRENT;BREAKDOWN WALKOUT;HEMTS
Date:	2003
Issue Date:	2010-07-06 18:29:22 (UTC+8)
Publisher:	中央大學
Abstract:	A novel low-k benzocyclobutene (BCB) bridged and passivated layer for AlGaAs/InGaAs doped-channel power field effect transistors (FETs) with high reliability and linearity has been developed and characterized. In this study, we applied a low-k BCB-bridged
Relation:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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