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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32489


    Title: In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K
    Authors: Jiang,L;Li,SS;Yeh,NT;Chyi,JI;Ross,CE;Jones,KS
    Contributors: 電機工程研究所
    Date: 2003
    Issue Date: 2010-07-06 18:29:33 (UTC+8)
    Publisher: 中央大學
    Abstract: A high-sensitivity In0.6Ga0.4As/GaAs quantum-dot infrared photodetector (QDIP) with detection wave band in 6.7-11.5 mum and operating temperature up to 260 K under normal incident illumination has been demonstrated. The peak detection wavelength shifts fr
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[Graduate Institute of Electrical Engineering] journal & Dissertation

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