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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32495


    Title: Mechanisms for photon-emission enhancement with silicon doping in InGaN/GaN quantum-well structures
    Authors: Cheng,YC;Tseng,CH;Hsu,C;Ma,KJ;Feng,SW;Lin,EC;Yang,CC;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: OPTICAL-PROPERTIES;MULTIQUANTUM WELLS;SI;GAN;BARRIERS;LUMINESCENCE;DEPENDENCE;TRANSPORT
    Date: 2003
    Issue Date: 2010-07-06 18:29:44 (UTC+8)
    Publisher: 中央大學
    Abstract: Material and optical analyses of three InGaN/GaN quantum-well (QW) samples with different silicon-doping conditions were conducted. Quantum-dot (QD) structures were observed in samples of silicon doping either in barriers or wells. The calibrated-radiativ
    Relation: JOURNAL OF ELECTRONIC MATERIALS
    Appears in Collections:[電機工程研究所] 期刊論文

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