English  |  正體中文  |  简体中文  |  Items with full text/Total items : 69561/69561 (100%)
Visitors : 23118679      Online Users : 382
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32504


    Title: Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells
    Authors: Peng,LH;Shih,CW;Lai,CM;Chuo,CC;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: LIGHT-EMITTING-DIODES;FIELD-EFFECT TRANSISTORS;INGAN SINGLE;LASER-DIODES;POLARIZATION;EMISSION;BLUE;SEMICONDUCTORS;ALGAN/GAN;DEVICES
    Date: 2003
    Issue Date: 2010-07-06 18:30:02 (UTC+8)
    Publisher: 中央大學
    Abstract: We report the use of selective wavelength excitation to examine the surface band-bending effects on the optical properties of 3.0-nm-thick indium gallium nitride (InGaN) multiple quantum wells (MQWs). Under a 355-nm excitation, the In0.18Ga0.82N well emis
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML363View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明