Transport in a gated Al0.18Ga0.82N/GaN electron system

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32507

Title:	Transport in a gated Al0.18Ga0.82N/GaN electron system
Authors:	Juang,JR;Huang,TY;Chen,TM;Lin,MG;Kim,GH;Lee,Y;Liang,CT;Hang,DR;Chen,YF;Chyi,JI
Contributors:	電機工程研究所
Keywords:	MOLECULAR-BEAM EPITAXY;ALGAN-GAN HETEROSTRUCTURES;LIGHT-EMITTING-DIODES;VAPOR-PHASE EPITAXY;MOBILITY;POLARIZATION;OPERATION;SUBSTRATE
Date:	2003
Issue Date:	2010-07-06 18:30:08 (UTC+8)
Publisher:	中央大學
Abstract:	We have investigated the low-temperature transport properties of front-gated Al0.18Ga0.82N/GaN heterostructures. At zero gate voltage, the Hall mobility increases with decreasing temperature (20 Kless than or equal toTless than or equal to190 K) due to a
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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