Type-II Zn1-xMnxSe/ZnSe1-yTey quantum wells

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32508

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32508

Title:	Type-II Zn1-xMnxSe/ZnSe1-yTey quantum wells
Authors:	Yang,CS;Cheng,CC;Kuo,MC;Tseng,PY;Shen,JL;Lee,J;Chou,WC;Jeng,S;Lai,CY;Hsu,TM;Chyi,JI
Contributors:	電機工程研究所
Keywords:	MOLECULAR-BEAM EPITAXY;SPIN INJECTION;COMPUTATION;HETEROSTRUCTURE
Date:	2003
Issue Date:	2010-07-06 18:30:10 (UTC+8)
Publisher:	中央大學
Abstract:	Zn1-xMnxSe/ZnSe1-yTey (x = 0.03, y = 0.08) multiple-quantum-well structures were grown on GaAs substrates by molecular-beam epitaxy. Strong photoluminescence associated with iso-electronic Te traps was observed. A type-II band alignment was proposed for t
Relation:	THIN SOLID FILMS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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