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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32512


    Title: Reactive ion etching of GaN/InGaN using BCl3 plasma
    Authors: Hong,HF;Chao,CK;Chyi,JI;Tzeng,YC
    Contributors: 電機工程研究所
    Keywords: GAS
    Date: 2003
    Issue Date: 2010-07-06 18:30:19 (UTC+8)
    Publisher: 中央大學
    Abstract: Reactive ion etching (RIE) of GaN and InGaN using BCl3 plasma under a high self-bias voltage was carried out. The effects of rf plasma power, chamber pressure and BCl3 flow rate on the etch rate were investigated. An etch rate as high as 132 nm min(-1) fo
    Relation: MATERIALS CHEMISTRY AND PHYSICS
    Appears in Collections:[電機工程研究所] 期刊論文

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