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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32517


    Title: A new empirical large-signal model for enhancement-mode AlGaAs/InGaAs pHEMTs
    Authors: Lin,CK;Wang,WK;Chan,YJ
    Contributors: 電機工程研究所
    Date: 2002
    Issue Date: 2010-07-06 18:30:30 (UTC+8)
    Publisher: 中央大學
    Abstract: We propose a new large-signal model for AlGaAs/InGaAs pHEMTs, which can simulate the device microwave output power, non-linear characteristics at arbitrary bias points. This model includes a new drain current equation, which is extracted from its derivati
    Relation: SOLID-STATE ELECTRONICS
    Appears in Collections:[電機工程研究所] 期刊論文

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