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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32521


    Title: A novel GaAs MESFET with surface oxygen implantation
    Authors: Hsin,YM;Hsueh,KP;Hsu,CJ
    Contributors: 電機工程研究所
    Date: 2002
    Issue Date: 2010-07-06 18:30:38 (UTC+8)
    Publisher: 中央大學
    Abstract: Oxygen ion implantation has been employed, for the first time, to form the high-resistance layer in the surface of GaAs MESFETs. Comparable DC and RF performance were achieved for MESFETs with and without oxygen ion implantation; however, MESFETs with the
    Relation: SOLID-STATE ELECTRONICS
    Appears in Collections:[電機工程研究所] 期刊論文

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