AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32524

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Title:	AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy
Authors:	Kikuchi,A;Bannai,R;Kishino,K;Lee,CM;Chyi,JI
Contributors:	電機工程研究所
Keywords:	HETEROSTRUCTURES;GAN;OSCILLATIONS;IMPROVEMENT;TEMPERATURE
Date:	2002
Issue Date:	2010-07-06 18:30:44 (UTC+8)
Publisher:	中央大學
Abstract:	AlN/GaN double-barrier resonant tunneling diodes (DB-RTDs) were fabricated on (0001) Al2O3 substrates by molecular-beam epitaxy, using a rf-plasma nitrogen source. The AlN/GaN DB-RTDs were designed to have a 3-ML-thick GaN quantum well and 4-ML-thick AlN
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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