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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32527

    Title: Analysis of Si/SiGe channel pMOSFETs for deep-submicron scaling
    Authors: Li,PW;Liao,WM
    Contributors: 電機工程研究所
    Keywords: MOBILITY;GATE
    Date: 2002
    Issue Date: 2010-07-06 18:30:51 (UTC+8)
    Publisher: 中央大學
    Abstract: Short-channel effects of Si1-xGex p-channel MOSFETs have been examined by two-dimensional computer simulation. It is found that devices incorporating SiGe channel offer worthwhile advantages in device performance and scalability. In addition to enhanced d
    Appears in Collections:[電機工程研究所] 期刊論文

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