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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32534


    Title: Design of high speed Si/SiGe heterojunction complementary metal-oxide-semiconductor field effect transistors with reduced short-channel effects
    Authors: Li,PW;Liao,WM
    Contributors: 電機工程研究所
    Keywords: HOLE MOBILITY;HETEROSTRUCTURES;MOSFETS;ALLOYS
    Date: 2002
    Issue Date: 2010-07-06 18:31:10 (UTC+8)
    Publisher: 中央大學
    Abstract: By taking advantages of higher carrier mobility and bandgap engineering in the Si/SiGe system, we explore the channel and source/drain (S/D) designs for Si/SiGe heterojunction complementary metal-oxide-semiconductor field effect transistors (CMOSFETs). A
    Relation: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    Appears in Collections:[電機工程研究所] 期刊論文

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