A high power density and a large voltage swing of Al0.5Ga0.5As/InGaAs enhancement-mode pseudomorphic high electron mobility transistor (pHEMTs) operated under V-ds = 3.5 V for L-band application have been achieved using a high-uniformity and high-selectiv
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
