English  |  正體中文  |  简体中文  |  Items with full text/Total items : 67621/67621 (100%)
Visitors : 23023741      Online Users : 422
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32541


    Title: Hole emission processes in InAs/GaAs self-assembled quantum dots
    Authors: Chang,WH;Chen,WY;Hsu,TM;Yeh,NT;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: ADMITTANCE SPECTROSCOPY;ELECTRONIC-STRUCTURE;PHOTOCURRENT SPECTROSCOPY;CAPACITANCE-VOLTAGE;CARRIER ESCAPE;BAND OFFSETS;INAS;GAAS;RELAXATION;WELL
    Date: 2002
    Issue Date: 2010-07-06 18:31:24 (UTC+8)
    Publisher: 中央大學
    Abstract: We present a study of the hole emission processes in InAs/GaAs quantum dots using capacitance and admittance spectroscopies. From the conductance mapping, the hole levels show a quasicontinuous distribution, instead of the clear shell structures that have
    Relation: PHYSICAL REVIEW B
    Appears in Collections:[電機工程研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML357View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明