Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32543

Title:	Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures
Authors:	Feng,SW;Cheng,YC;Chung,YY;Yang,CC;Lin,YS;Hsu,C;Ma,KJ;Chyi,JI
Contributors:	電機工程研究所
Keywords:	TIME-RESOLVED PHOTOLUMINESCENCE;MOLECULAR-BEAM EPITAXY;LIGHT-EMITTING-DIODES;EXCITON LOCALIZATION;OPTICAL-PROPERTIES;TEMPERATURE;EMISSION;SHIFT;DOTS;THERMALIZATION
Date:	2002
Issue Date:	2010-07-06 18:31:28 (UTC+8)
Publisher:	中央大學
Abstract:	Multiple-component decays of photoluminescence (PL) in InGaN/GaN quantum wells have been widely reported. However, their physical interpretations have not been well discussed yet. Based on wavelength-dependent and temperature-varying time-resolved PL meas
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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