Improved device linearity of AlGaAs/InGaAs HFETs by a second mesa etching

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Title:	Improved device linearity of AlGaAs/InGaAs HFETs by a second mesa etching
Authors:	Chiu,HC;Yang,SC;Chien,FT;Chan,YJ
Contributors:	電機工程研究所
Keywords:	GATE
Date:	2002
Issue Date:	2010-07-06 18:31:30 (UTC+8)
Publisher:	中央大學
Abstract:	Conventional mesa isolation process in AlGaAs/InGaAs heterostructure FETs results in the gate contacting the exposed highly doped region at the mesa sidewalls, forming a parasitic gate leakage path. In this letter, we suppress the gate leakage from the me
Relation:	IEEE ELECTRON DEVICE LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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