InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy

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Title:	InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy
Authors:	Yeh,NT;Liu,WS;Chen,SH;Chiu,PC;Chyi,JI
Contributors:	電機工程研究所
Keywords:	CHEMICAL-VAPOR-DEPOSITION;ROOM-TEMPERATURE;THRESHOLD
Date:	2002
Issue Date:	2010-07-06 18:31:36 (UTC+8)
Publisher:	中央大學
Abstract:	This letter presents the lasing properties of InAs/GaAs quantum dot lasers with InGaP cladding layers grown by solid-source molecular-beam epitaxy. These Al-free lasers exhibit a threshold current density of 138 A/cm(2), an internal loss of 1.35 cm(-1), a
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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