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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32553

    Title: Low-frequency noise analysis of Si/SiGe channel pMOSFETs
    Authors: Li,PW;Liao,WM
    Contributors: 電機工程研究所
    Keywords: MOBILITY
    Date: 2002
    Issue Date: 2010-07-06 18:31:52 (UTC+8)
    Publisher: 中央大學
    Abstract: Low-frequency noise characteristics of 0.1 mum Si1-xGex channel pMOSFETs were studied by numerical simulations in the framework of the carrier number fluctuation model as well as the correlated fluctuation in the mobility model. Simulation results predict
    Appears in Collections:[電機工程研究所] 期刊論文

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