Phonon-replica transitions in InGaN/GaN quantum well structures

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32561

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32561

Title:	Phonon-replica transitions in InGaN/GaN quantum well structures
Authors:	Feng,SW;Tsai,CY;Cheng,YC;Liao,CC;Yang,CC;Lin,YS;Ma,KJ;Chyi,JI
Contributors:	電機工程研究所
Keywords:	PHOTOLUMINESCENCE;LASER;LUMINESCENCE;LOCALIZATION;DOTS;GAN
Date:	2002
Issue Date:	2010-07-06 18:32:08 (UTC+8)
Publisher:	中央大學
Abstract:	A side-bump feature in a photoluminescence (PL) spectrum of an InGaN compound was widely observed. With reasonable fitting to PL spectra with three Gaussian distributions, the temperature variations of the peak positions, integrated PL intensities, and pe
Relation:	OPTICAL AND QUANTUM ELECTRONICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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