Single-crystal GaN/Gd2O3/GaN heterostructure

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32564

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32564

Title:	Single-crystal GaN/Gd2O3/GaN heterostructure
Authors:	Hong,M;Kwo,J;Chu,SNG;Mannaerts,JP;Kortan,AR;Ng,HM;Cho,AY;Anselm,KA;Lee,CM;Chyi,JI
Contributors:	電機工程研究所
Keywords:	GATE DIELECTRICS GD2O3;GAAS MOSFETS;GA2O3(GD2O3);OXIDE;CHANNEL;Y2O3
Date:	2002
Issue Date:	2010-07-06 18:32:14 (UTC+8)
Publisher:	中央大學
Abstract:	Heteroepitaxy of single-crystal Gd2O3 on GaN (with a wurtzite hexagonal close-packed (hcp) structure) and single-crystal GaN on Gd2O3 was achieved. In situ reflection high-energy electron diffraction reveals a sixfold symmetry in the in-plane epitaxy of t
Relation:	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	502	View/Open

社群 sharing