A comparative study of the passivation films on AlGaAs/GaAs heterojunction diodes and bipolar transistors

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32573

Title:	A comparative study of the passivation films on AlGaAs/GaAs heterojunction diodes and bipolar transistors
Authors:	Hwang,HP;Cheng,YS;Shieh,JL;Chyi,JI
Contributors:	電機工程研究所
Keywords:	SURFACE;RECOMBINATION;TEMPERATURE
Date:	2001
Issue Date:	2010-07-06 18:32:36 (UTC+8)
Publisher:	中央大學
Abstract:	A series of Si-based thin films, including amorphous Si, SiC, as well as the conventionalSiO(infinity) and SINinfinity, was investigated in terms of the electrical characteristics of GaAs/Al0.3Ga0.7As heterostructure diodes and heterojunction bipolar tran
Relation:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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