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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32590


    Title: Comparison of GaN p-i-n and Schottky rectifier performance
    Authors: Zhang,APP;Dang,GT;Ren,F;Cho,H;Lee,KP;Pearton,SJ;Chyi,JI;Nee,TE;Lee,CM;Chuo,CC
    Contributors: 電機工程研究所
    Keywords: DESIGN CONSIDERATIONS;BREAKDOWN
    Date: 2001
    Issue Date: 2010-07-06 18:33:12 (UTC+8)
    Publisher: 中央大學
    Abstract: The performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperature. There was a significant difference in reverse breakdown voltage (490 V for p-i-n diodes; 347 V for t
    Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES
    Appears in Collections:[電機工程研究所] 期刊論文

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