Device linearity and gate voltage swing improvement by Al0.3Ga0.7As/In0.15Ga0.85As double doped-channel design

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Title:	Device linearity and gate voltage swing improvement by Al0.3Ga0.7As/In0.15Ga0.85As double doped-channel design
Authors:	Chien,FT;Chiu,HC;Yang,SC;Chen,CW;Chan,YJ
Contributors:	電機工程研究所
Keywords:	FET;SINGLE;BAND
Date:	2001
Issue Date:	2010-07-06 18:33:23 (UTC+8)
Publisher:	中央大學
Abstract:	Devices DC, RF, and microwave power performances between Al0.3Ga0.7As/In0.15Ga0.85As double doped-channel FET (D-DCFETs), conventional doped-channel FETs (DCFETs) and HEMTs are compared with each other. Device linearity and power performance have been imp
Relation:	IEICE TRANSACTIONS ON ELECTRONICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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