GaAs metal-semiconductor field-effect transistor with surface oxygen implantation

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32604

Title:	GaAs metal-semiconductor field-effect transistor with surface oxygen implantation
Authors:	Hsin,YM;Hsueh,KP;Hsu,CJ;Wu,LW
Contributors:	電機工程研究所
Keywords:	MESFETS;LAYER;GATE
Date:	2001
Issue Date:	2010-07-06 18:33:43 (UTC+8)
Publisher:	中央大學
Abstract:	Oxygen implantation has been employed to form a high-resistance region between the channel and the surface of GaAs metal-semiconductor field-effect transistors (MESFETs). Comparable DC and RF performances were achieved for MESFETs with and without oxygen
Relation:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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