GaN electronics for high power, high temperature applications

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32605

Title:	GaN electronics for high power, high temperature applications
Authors:	Pearton,SJ;Ren,F;Zhang,AP;Dang,G;Cao,XA;Lee,KP;Cho,H;Gila,BP;Johnson,JW;Monier,C;Abernathy,CR;Han,J;Baca,AG;Chyi,JI;Lee,CM;Nee,TE;Chuo,CC;Chu,SNG
Contributors:	電機工程研究所
Keywords:	MICROWAVE
Date:	2001
Issue Date:	2010-07-06 18:33:45 (UTC+8)
Publisher:	中央大學
Abstract:	A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GalGaN heterojunction bipolar transistors and GaN metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fab
Relation:	MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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