Piezoelectric field-induced quantum-confined Stark effect in InGaN/GaN multiple quantum wells

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32624

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32624

Title:	Piezoelectric field-induced quantum-confined Stark effect in InGaN/GaN multiple quantum wells
Authors:	Lai,CY;Hsu,TM;Chang,WH;Tseng,KU;Lee,CM;Chuo,CC;Chyi,JI
Contributors:	電機工程研究所
Date:	2001
Issue Date:	2010-07-06 18:34:26 (UTC+8)
Publisher:	中央大學
Abstract:	In this paper, we present an experimental evidence for the piezoelectric field-induced quantum-confined Stark effect (QCSE) on InGaN/GaN quantum wells. The optical transitions of In0.23Ga0.77N/GaN p-i-n MQWs were studied by using modulation spectroscopy (
Relation:	PHYSICA STATUS SOLIDI B-BASIC RESEARCH
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	498	View/Open

社群 sharing