Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32625

Title:	Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure
Authors:	Lin,CJ;Huang,YS;Li,NY;Li,PW;Tiong,KK
Contributors:	電機工程研究所
Keywords:	BAND-GAP REDUCTION;GAINP/GAAS HETEROJUNCTION;LASER-DIODES;GAAS;SEMICONDUCTORS;SPECTROSCOPY;OFFSETS;GAINNAS;GAINP2;FIELDS
Date:	2001
Issue Date:	2010-07-06 18:34:28 (UTC+8)
Publisher:	中央大學
Abstract:	We have characterized an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure using polarized photoreflectance (PR) spectroscopy. The ordering parameter of the InGaP is deduced from the polarization {[110] and [1 (1) over bar0]} depen
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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