RIE gate-recessed (Al0.3Ga0.7)(0.5)In0.5P/InGaAs double doped-channel FETs using CHF3+BCl3 mixing plasma

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Title:	RIE gate-recessed (Al0.3Ga0.7)(0.5)In0.5P/InGaAs double doped-channel FETs using CHF3+BCl3 mixing plasma
Authors:	Yang,SC;Chiu,HC;Chien,FT;Chan,YJ;Kuo,JM
Contributors:	電機工程研究所
Keywords:	DESIGN;HEMTS
Date:	2001
Issue Date:	2010-07-06 18:34:39 (UTC+8)
Publisher:	中央大學
Abstract:	BCl3+ CHF3 gas mixture for reactive ion etching process was used to the gate-recess of fabricating (Al0.3Ga0.7)(0.5)In0.5P quaternary heterostructure double doped-channel FET's (D-DCFET), where a high uniformity of V-th was achieved. With the merits of th
Relation:	IEEE ELECTRON DEVICE LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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