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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32636


    Title: Two-component photoluminescence decay in InGaN/GaN multiple quantum well structures
    Authors: Feng,SW;Cheng,YC;Liao,CC;Chung,YY;Liu,CW;Yang,CC;Lin,YS;Ma,KJ;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: TIME-RESOLVED PHOTOLUMINESCENCE;LOCALIZED EXCITONS;EMISSION
    Date: 2001
    Issue Date: 2010-07-06 18:34:53 (UTC+8)
    Publisher: 中央大學
    Abstract: Two-component decay of time-resolved photo luminescence (TRPL) intensity in three InGaN/GaN multiple quantum well samples were observed. The first-decay component was attributed to exciton relaxation of free-carrier and localized states; the second-decay
    Relation: PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    Appears in Collections:[電機工程研究所] 期刊論文

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