Schottky rectifiers fabricated on free-standing GaN substrates

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32638

Title:	Schottky rectifiers fabricated on free-standing GaN substrates
Authors:	Johnson,JW;LaRoch,JR;Ren,F;Gila,BP;Overberg,ME;Abernathy,CR;Chyi,JI;Chou,CC;Nee,TE;Lee,CM;Lee,KP;Park,SS;Park,YJ;Pearton,SJ
Contributors:	電機工程研究所
Keywords:	BREAKDOWN VOLTAGE;TEMPERATURE-DEPENDENCE;DIODES;FIELD
Date:	2001
Issue Date:	2010-07-06 18:34:57 (UTC+8)
Publisher:	中央大學
Abstract:	GaN Schottky rectifiers have been fabricated on free-standing substrates and on epi/substrate structures. Forward turn-on voltages were as low as 3 V at 25 degreesC. Reverse recovery was complete in <600 ns; with a characteristic time constant of <similar
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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