中大機構典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Item 987654321/32652
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 67783/67783 (100%)
Visitors : 23086828      Online Users : 210
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32652


    Title: Electron distribution and level occupation in an ensemble of InxGa1-xAs/GaAs self-assembled quantum dots
    Authors: Chang,WH;Hsu,TM;Yeh,NT;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: ENERGY-LEVELS;SPECTROSCOPY;STORAGE;PHOTOLUMINESCENCE;RELAXATION;INJECTION;LASERS;STATES
    Date: 2000
    Issue Date: 2010-07-06 18:35:26 (UTC+8)
    Publisher: 中央大學
    Abstract: We presented capacitance-voltage characteristics and electron-filling reflectance measurements to investigate electron distribution in In0.5Ga0.5As self-assembled quantum dot ensemble. First, the electronic structures of the quantum dots were constructed
    Relation: PHYSICAL REVIEW B
    Appears in Collections:[Graduate Institute of Electrical Engineering] journal & Dissertation

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML365View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明