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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32654


    Title: Ellipsometric study of the optical properties of InGaAsN layers
    Authors: Li,PW;Guang,HC;Li,NY
    Contributors: 電機工程研究所
    Keywords: CHEMICAL-VAPOR-DEPOSITION;DIELECTRIC FUNCTIONS;LASER-DIODES;GAAS;OPERATION;INP;GAP
    Date: 2000
    Issue Date: 2010-07-06 18:35:30 (UTC+8)
    Publisher: 中央大學
    Abstract: We report the optical properties of the quaternary compound semiconductor, InxGa1-xAs1-yNy, with various indium and nitrogen contents. The refractive indices of InxGa1-xAs1-yNy epilayers were systematically studied by variable angle spectroscopic ellipsom
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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