High voltage GaN Schottky rectifiers

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32659

Title:	High voltage GaN Schottky rectifiers
Authors:	Dang,GT;Zhang,AP;Ren,F;Cao,XNA;Pearton,SJ;Cho,H;Han,J;Chyi,JI;Lee,CM;Chuo,CC;Chu,SNG;Wilson,RG
Contributors:	電機工程研究所
Keywords:	TEMPERATURE-DEPENDENCE;POWER DEVICES;TRANSISTORS;BREAKDOWN;DIODES;FIELD
Date:	2000
Issue Date:	2010-07-06 18:35:41 (UTC+8)
Publisher:	中央大學
Abstract:	Mesa and planar GaN Schottky diode rectifiers vith reverse breakdown voltages (V-RB) up to 550 and >2000 V,respectively. hare been fabricated, The on-state resistance, R-ON, was 6 m Ohm.cm(2) and 0.8 Ohm cm(2), respectivetly, producing figure-of-merit val
Relation:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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