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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32679


    Title: Processing and device performance of GaN power rectifiers
    Authors: Zhang,AP;Dang,GT;Cao,XA;Cho,H;Ren,F;Han,J;Chyi,JI;Lee,CM;Nee,TE;Chuo,CC;Chi,GC;Chu,SNG;Wilson,RG;Pearton,SJ
    Contributors: 電機工程研究所
    Date: 2000
    Issue Date: 2010-07-06 18:36:23 (UTC+8)
    Publisher: 中央大學
    Abstract: Mesa and planar geometry GaN Schottky rectifiers were fabricated on 3-12 mum thick epitaxial layers. In planar diodes utilizing resistive GaN, a reverse breakdown voltage of 3.1 kV was achieved in structures containing p-guard rings and employing extensio
    Relation: MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    Appears in Collections:[電機工程研究所] 期刊論文

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