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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32680


    Title: Properties and effects of hydrogen in GaN
    Authors: Pearton,SJ;Cho,H;Ren,F;Chyi,JI;Han,J;Wilson,RG
    Contributors: 電機工程研究所
    Keywords: CHEMICAL-VAPOR-DEPOSITION;P-TYPE GAN;MG;PASSIVATION;ACCEPTORS;DEFECTS;SEMICONDUCTORS;COMPENSATION;ACTIVATION;ALN
    Date: 2000
    Issue Date: 2010-07-06 18:36:26 (UTC+8)
    Publisher: 中央大學
    Abstract: The status of understanding of the behavior of hydrogen in GaN and related materials is reviewed. In particular, we discuss the amount of residual hydrogen in MOCVD-grown device structures such as heterojunction bipolar transistors, thyristors and p-i-n d
    Relation: MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    Appears in Collections:[電機工程研究所] 期刊論文

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