Reactive-ion-etching (AlxGa1-x)(0.5)In0.5P quaternary compounds using chlorine and fluorine mixing plasma

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Title:	Reactive-ion-etching (AlxGa1-x)(0.5)In0.5P quaternary compounds using chlorine and fluorine mixing plasma
Authors:	Yang,SC;Chan,YJ;Chang,KH;Lin,KC
Contributors:	電機工程研究所
Date:	2000
Issue Date:	2010-07-06 18:36:28 (UTC+8)
Publisher:	中央大學
Abstract:	Both BCl3+CHF3 and BCl3+CF4 reactive ion etching processes were used to study the etching characteristics of (AlxGa1-x)(0.5)In0.5P quaternary compounds with various Al contents (x=0, 0.3, 0.7, 1). By increasing the fluorine-based gas (CHF3 or CF4) into th
Relation:	COMPOUND SEMICONDUCTORS 1999
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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