Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32698

Title:	Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes
Authors:	Hong,M;Anselm,KA;Kwo,J;Ng,HM;Baillargeon,JN;Kortan,AR;Mannaerts,JP;Cho,AY;Lee,CM;Chyi,JI;Lay,TS
Contributors:	電機工程研究所
Keywords:	FIELD-EFFECT TRANSISTORS;INTERFACE STATE DENSITY;OXIDE;GAN;FILMS
Date:	2000
Issue Date:	2010-07-06 18:37:05 (UTC+8)
Publisher:	中央大學
Abstract:	Ga2O3(Gd2O3), electron beam evaporated from a single crystal Ga5Gd3O12 garnet, was en: situ deposited on molecular beam epitaxy grown GaN of Ga-polar surface. Using capacitance-voltage measurement, accumulation and depletion behavior was observed in the G
Relation:	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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