Low Schottky barrier to etched p-GaN using regrown AlInGaN and InGaN contact layer

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32719

Title:	Low Schottky barrier to etched p-GaN using regrown AlInGaN and InGaN contact layer
Authors:	Hsueh,KP;Hsin,YM;Sheu,JK
Contributors:	電機工程研究所
Keywords:	HETEROJUNCTION BIPOLAR-TRANSISTORS;PLASMA;FABRICATION;DIODES;DAMAGE
Date:	2006
Issue Date:	2010-07-07 09:56:12 (UTC+8)
Publisher:	中央大學
Abstract:	The p-type AlInGaN and InGaN contact layers were regrown on the etched p-GaN to study the Ni/Au contact current-voltage (I-V) characteristics. The thickness of the contact layer was 100 nm and regrown by metalorganic chemical vapor deposition. By using th
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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