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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32723


    Title: Reversible off-state breakdown walkout in passivated AlGaAs/InGaAs PHEMTs
    Authors: Tang,WB;Hsin,YM
    Contributors: 電機工程研究所
    Keywords: GAAS-MESFET;HEMTS
    Date: 2006
    Issue Date: 2010-07-07 09:56:20 (UTC+8)
    Publisher: 中央大學
    Abstract: The reversible breakdown walkout in the Si3N4 passivated AlGaAs/InGaAs pseudomorphic high-electron mobility transistors (PHEMTs) has been observed and investigated. Due to the double passivation processes, the fabricated PHEMTs demonstrated the reversible
    Relation: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
    Appears in Collections:[電機工程研究所] 期刊論文

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