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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32726


    Title: Si/SiGe-based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance
    Authors: Shi,JW;Chiu,PH;Huang,FH;Wu,YS;Lu,JY;Sun,CK;Liu,CW;Chen,PS
    Contributors: 電機工程研究所
    Keywords: SILICON OPTICAL RECEIVER;HIGH-SPEED;PHOTODETECTORS;TECHNOLOGY;BANDWIDTH
    Date: 2006
    Issue Date: 2010-07-07 09:56:25 (UTC+8)
    Publisher: 中央大學
    Abstract: We demonstrate a Si/SiG-based edge-coupled photodiode that can achieve high-speed, high output power, and high responsivity performance at a wavelength of 830 nm for application to short-reach fiber communication. We incorporate a p-type-doped Si/Si0.5Ge0
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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