Study of carrier transport by pentacene thin-film transistors at high temperatures

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32730

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32730

Title:	Study of carrier transport by pentacene thin-film transistors at high temperatures
Authors:	Lo,PY;Pei,ZW;Hwang,JJ;Tseng,HY;Chan,YJ
Contributors:	電機工程研究所
Keywords:	FIELD-EFFECT TRANSISTORS;SINGLE-CRYSTAL;FABRICATION;CIRCUITS
Date:	2006
Issue Date:	2010-07-07 09:56:34 (UTC+8)
Publisher:	中央大學
Abstract:	In this study, the interface properties of pentacene organic thin-film transistors (OTFTs) were analyzed at elevated temperatures. The pentacene layers were deposited on the poly(alpha-methyl styrene) (PMS)-treated SiO2 dielectric layers. The threshold vo
Relation:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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