The improvement of GaN p-i-n UV sensor by 8-pair AlGaN/GaN superlattices structure

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32732

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32732

Title:	The improvement of GaN p-i-n UV sensor by 8-pair AlGaN/GaN superlattices structure
Authors:	Liu,SS;Li,PW;Lan,WH;Cheng,YC
Contributors:	電機工程研究所
Keywords:	ULTRAVIOLET DETECTORS;PHOTODETECTORS;INTERLAYER;GROWTH
Date:	2006
Issue Date:	2010-07-07 09:56:38 (UTC+8)
Publisher:	中央大學
Abstract:	GaN with pairs of AlGaN/GaN superlattices (SLs) structure for p-i-n UV photo detector are fabricated on sapphire by metal organic chemical vapor deposition (MOCVD). For 8-pair AlGaN/GaN SLs not only eliminates cracking through this strain management, but
Relation:	MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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