English  |  正體中文  |  简体中文  |  Items with full text/Total items : 67621/67621 (100%)
Visitors : 23037737      Online Users : 218
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35201


    Title: Growth and characterization of crack-free semipolar {1-101}InGaN/GaN multiple-quantum well on V-grooved (001)Si substrates
    Authors: Chen,Guan-Ting;Chang,Shih-Pang;Chyi,Jen-Inn;Chang,Mao-Nan
    Contributors: 光電科學與工程學系
    Keywords: VAPOR-PHASE EPITAXY;GAN LAYERS;SI(111);SI(001);SI
    Date: 2008
    Issue Date: 2010-07-07 14:06:22 (UTC+8)
    Publisher: 中央大學
    Abstract: This work elucidates the two-stage growth of GaN on V-grooved (001)Si substrates using metal-organic chemical vapor deposition. The first growth stage proceeds on the {111}Si sidewalls until GaN fills the V grooves. Then the second stage continues and lea
    Relation: APPLIED PHYSICS LETTERS????
    Appears in Collections:[光電科學與工程學系] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML486View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明