Growth of gamma-In2Se3 films on Si substrates by metal-organic chemical vapor deposition with different temperatures

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35202

Title:	Growth of gamma-In2Se3 films on Si substrates by metal-organic chemical vapor deposition with different temperatures
Authors:	Huang,Yen-Chin;Li,Zhen-Yu;Uen,Wu-Yih;Lan,Shan-Ming;Chang,K. J.;Xie,Zhi-Jay;Chang,J. Y.;Wang,Shing-Chung;Shen,Ji-Lin
Contributors:	光電科學與工程學系
Keywords:	MOLECULAR-BEAM EPITAXY;THIN-FILMS;SOLAR-CELLS;IN2SE3
Date:	2008
Issue Date:	2010-07-07 14:06:24 (UTC+8)
Publisher:	中央大學
Abstract:	In2Se3 films were deposited on the p(+)-Si(1 1 1) substrates by metal-organic chemical vapor deposition (MOCVD) for the first time at temperatures higher than 500 degrees C. Trimethyl indium (TMI) and H2Se were used as the source reactants with the flow r
Relation:	JOURNAL OF CRYSTAL GROWTH
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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