Mechanism underlying damage induced in gallium nitride epilayer during laser lift-off process

NCU Institutional Repository > 理學院 > 光電科學與工程學系 > 期刊論文 > Item 987654321/35216

請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/35216

題名:	Mechanism underlying damage induced in gallium nitride epilayer during laser lift-off process
作者:	Lee,Ko-Tao;Lee,Yeeu-Chang;Tu,Sheng-Han;Lin,Ching-Liang;Chen,Po-Hen;Liu,Cheng-Yi;Chang,Jeng-Yang
貢獻者:	光電科學與工程學系
關鍵詞:	LIGHT-EMITTING-DIODES;FABRICATION
日期:	2008
上傳時間:	2010-07-07 14:06:51 (UTC+8)
出版者:	中央大學
摘要:	A vertical-type gallium nitride blue light-emitting diode on silicon was prepared by using a laser lift-off process. A grid like surface was obtained after the laser lift-off process. The central part of the grid preserves a uniform surface morphology, bu
關聯:	JAPANESE JOURNAL OF APPLIED PHYSICS????
顯示於類別:	[光電科學與工程學系] 期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	395	檢視/開啟

在NCUIR中所有的資料項目都受到原著作權保護.

社群 sharing